IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit for Sale

IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit For Sale

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IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit:
$20.00

Before purchasing, please contact me to double check compatibility. Hynix 2x4GB (8GB Total) PC2-5300F-555-11 ECC (model HYMP151F72CP8D5-Y5)
Datasheet: memory is used and in perfectly working condition. It has been fully tested with multiple passes of MemTest86 V4. Please see memory report below.It comes from a smoke free and pet free home. You\'ll receive the exact memory shown so please check the pictures for more information. The memory will be placed in an antistatic bag and safely packaged prior to shipping to protect it during transit.Standard shipping in the USA is free and includes a tracking number. Please check my response and offer with confidence Thank you for & Logical AttributesFundamental Memory Class:DDR2 SDRAM FB-DIMMModule Speed Grade:DDR2-667DModule Capacity:4096 MBModule Thickness (mm):8.0 < x <= 9.0Module Height (mm):30 < x <= 35Module Type:FB-DIMM (133.35 mm)Number of DIMM Ranks:4Number of Column Addresses:10 bitsNumber of Row Addresses:14 bitsNumber of Bank Addresses:3 bit (8 banks)DRAM Device Width:8 bitCalculated DRAM Capacity:1 GbDRAM Density:1 GbNumber of DRAM components:36DRAM Page Size:1 KBChannel Interface Power Supply:1.5 VDRAM Interface Power Supply:1.8 VDRAM Timing ParametersFine Timebase Divisor:1 psFine Timebase Dividend:2 psMedium Timebase Dividend:1 nsMedium Timebase Divisor:4 nsMinimum Clock Cycle Time (tCK min):3.00 ns (333.33 MHz)Maximum Clock Cycle Time (tCK max):8.00 ns (125.00 MHz)Minimum CAS# Latency Time (tAA min):15.00 nsBurst Lengths Supported:4, 8CAS# Latencies Supported (tCL):4T, 5TMinimum RAS# to CAS# Delay Time (tRCD):15.00 nsMinimum Row Active to Row Active Delay (tRRD):7.50 nsMinimum Row Precharge Delay Time (tRP):15.00 nsMinimum Active to Precharge Delay Time (tRAS):45.00 nsMinimum Act to Act/Refresh Delay Time (tRC):60.00 nsMinimum Refresh Recovery Delay Time (tRFC):127.50 nsMinimum Write Recovery Time (tWR):16.50 nsWrite Recovery Times Supported:2T, 3T, 4T, 5TWrite Latencies Supported:2T, 3T, 4T, 5TAdditive Latencies Supported:0T, 1T, 2T, 3TMinimum Write to Read Command Delay (tWTR):7.50 nsMinimum Read to Precharge Command Delay (tRTP):7.50 nsAverage Refresh Interval (tREFI):7.80 nsRank Read-to-Read additional clocks:0TWrite-to-Read additional clocks:0TRead-to-Write additional clocks:1TTerminations Supported (150/75/50Ohm):Yes, Yes, YesRank 0 ODT Definition:150 OhmRank 1 ODT Definition:150 OhmWeak Driver:SupportedThermal ParametersDRAM Case Temperature Rise from AmbientDT0: due to Activate-Precharge6.30 °CDT2N/DT2Q: due to Precharge/Quiet Standby4.00 °CDT2P: due to Precharge Power-Down1.320 °CDT3N: due to Active Standby6.60 °CDT4R/DT4R4W: due to Page Open Burst Read20.00 °CDT5B: due to Burst Refresh23.00 °CDT7: due to Bank Interleave Reads with Auto-Precharge24.00 °CAMB Case Temperature Rise from AmbientDT AMB Idle_0: due to AMB in Idle_0 State58.0 °CDT AMB Idle_1: due to AMB in Idle_1 State71.0 °CDT AMB Idle_2: due to AMB in Idle_2 State58.0 °CDT AMB Active_1: due to AMB in Active_1 State95.0 °CDT AMB Active_2: due to AMB in Active_2 State79.0 °CDT AMB L0s: due to AMB in L0s StateNot supportedThermal ResistancePsi[T-A DRAM]: DRAM Package from Top (Case) to Ambient69.5 °C/WPsi[T-A AMB]: AMB Package from Top (Junction) to Ambient21.0 °C/WMaximum TemperaturesDRAM Case Temperature Maximum95 °CAMB Junction Temperature Maximum125 °CThermal RequirementsDT4R4W DeltaNot supportedDRAM High Temperature Self-Refresh EntrySupportedDouble Refresh Rate at DRAM TCaseMax > 85°CRequiredSPD ProtocolSPD Revision:1.1SPD Bytes Total:256SPD Bytes Used:176SPD Checksum:D76Ch (OK)CRC covers bytes:0-116Part number detailsClassification:DDR2 SDRAMModule Type:240-pin FB-DIMM with Heat SpreaderModule Speed:DDR2-667 5-5-5Module Revision:UndefinedComponent Density:1Gb DDR2 SDRAM 8K Ref./8 BanksComponent Configuration:x8 basedMemory Depth:512MbData Width:72-bitDie Generation:4thPackage Type:FBGA Single DiePackage Material:Lead FreeAMB Vendor & Revision:IDT, Rev.5Power MHz 5551520433633267 MHz 4441216342522Module Manufacturer:HynixModule Part Number:HYMP151F72CP8D5-Y5DRAM Manufacturer:HynixDRAM Components:HY5PS1G831CFP-Y5DRAM Die Revision / Process Node:C / 66 nmAMB Manufacturer:Trident MicrosystemsModule Manufacturing Date:Week 15, 2009Manufacturing Date Decoded:April 6-10, 2009Module Serial Number:1D40392FhModule Manufacturing Location:Ichon, KoreaModule PCB Revision:00h

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IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit For Sale

IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit: $20.00

IBM hynix 8GB Kit (2x4GB) 4Rx8 PC2-5300F CL5 DDR2 FBDIMM SERVER RAM Memory Kit:
$20.00